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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF5015/D
The RF MOSFET Line
RF Power Field Effect Transistor
N-Channel Enhancement-Mode
Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment. * Guaranteed Performance at 512 MHz, 12.5 Volts Output Power -- 15 Watts Power Gain -- 10 dB Min Efficiency -- 50% Min * Characterized with Series Equivalent Large-Signal Impedance Parameters * S-Parameter Characterization at High Bias Levels * Excellent Thermal Stability * All Gold Metal for Ultra Reliability * Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2 dB Overdrive * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
MRF5015
15 W, 512 MHz, 12.5 VOLTS N-CHANNEL BROADBAND RF POWER FET
CASE 319-07, STYLE 3
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RJC Symbol Min Typ Value 36 36 20 6 50 0.29 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C
THERMAL CHARACTERISTICS
Max 3.5 Unit C/W
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0, ID = 5 mAdc) Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0) Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 36 -- -- -- -- -- -- 5 2 Vdc mAdc Adc (continued) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 6
(c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1994
MRF5015 1
ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 Vdc, ID = 10 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc ) VGS(th) VDS(on) gfs 1.25 -- 1.2 2.3 -- -- 3.5 0.375 -- Vdc Vdc S
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Ciss Coss Crss -- -- 7 33 74 8.8 -- -- 10.8 pF pF pF
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common-Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 15 W, IDQ = 100 mA) Drain Efficiency (VDD = 12.5 Vdc, Pout = 15 W, IDQ = 100 mA) Gps f = 512 MHz f = 175 MHz f = 512 MHz f = 175 MHz No Degradation in Output Power 50 -- 55 55 -- -- 10 -- 11.5 15 -- -- % dB
Load Mismatch (VDD = 15.5 Vdc, 2 dB Overdrive, f = 512 MHz, Load VSWR = 20:1, All Phase Angles at Frequency of Test)
R1 VGG R2 C1 + C2
B1 + C3 L1 R3 Z6 C7 Z5 C6 Z7 B1 C12 Socket C11 DUT Z8 C8 L2 Z9 Z10 C9 C10 Z11 N2 RF Output C13 VDD
Z4 RF N1 Input Z1 C4 Z2 C5 Z3
B1, B2 C1, C13 C2, C12 C3, C4, C10, C11 C5, C9 C6 C7 C8 L1, L2 N1, N2 R1 R2
Ferrite Bead, Fair Rite Products 10 F, 50 V, Electrolytic 0.1 F, Chip Capacitor 120 pF, Chip Capacitor 0 to 20 pF, Trimmer Capacitor 36 pF, Chip Capacitor 43 pF, Chip Capacitor 30 pF, Chip Capacitor 7 Turns, 24 AWG 0.116 ID Type N Flange Mount 1 k, 1/4 W, Carbon 470 k, 1/4 W, Carbon
R3 Z1, Z11 Z2 Z3 Z4 Z5 Z6 Z7, Z8 Z9 Z10 Board
160 , 0.1 W Chip Transmission Line* Transmission Line* Transmission Line* Transmission Line* Transmission Line* Transmission Line* Transmission Line+ Transmission Line* Transmission Line* Glass Teflon(R) 0.060 + Part of Capacitor Mount Socket *See Photomaster
Figure 1. 512 MHz Narrowband Test Circuit Electrical Schematic
MRF5015 2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
25 f = 400 MHz Pout , OUTPUT POWER (WATTS) 20 520 MHz 15 470 MHz Pout , OUTPUT POWER (WATTS) 20 1W 15 0.5 W 10 25 IDQ = 100 mA f = 520 MHz Pin = 1.5 W
10 VDD = 12.5 V IDQ = 100 mA
5
5
0 0 0.5 1 1.5 Pin, INPUT POWER (WATTS) 2 2.5
0 6 8 10 12 VDD, SUPPLY VOLTAGE (VOLTS) 14 16
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Supply Voltage
25 Pout , OUTPUT POWER (WATTS) VDD = 12.5 V Pin = 1.5 W f = 520 MHz Typical Device Shown 15
2 1.8 I D , DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 Typical Device Shown VDS = 10 V
20
10
5
0
1
2
3
4
5
6
0
0
1
2
3
4
VGS, GATE-SOURCE VOLTAGE (VOLTS)
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 4. Output Power versus Gate Voltage
Figure 5. Drain Current versus Gate Voltage
200 VGS = 0 f = 1 MHz C, CAPACITANCE (pF) 150
VGS , GATE-SOURCE VOLTAGE (NORMALIZED)
1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 0.94 - 25 0 ID = 0.05 A ID = 0.5 A ID = 0.25 A 150 175 VDD = 12.5 V ID = 1.5 A ID = 1 A
100
Coss
50 Crss 0 0 5
Ciss
25 15 20 10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
30
25
100 125 50 75 TC, CASE TEMPERATURE (C)
Figure 6. Capacitance versus Voltage
Figure 7. Gate-Source Voltage versus Case Temperature
MOTOROLA RF DEVICE DATA
MRF5015 3
TYPICAL CHARACTERISTICS
10 I D , DRAIN CURRENT (AMPS)
TC = 25C 1
0.1
1
10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
100
Figure 8. DC Safe Operating Area
VDD = 12.5 V, IDQ = 100 mA, Pout = 15 W f (MHz) 400 420 440 520 ZOL* 460 Zo = 10 Zin 520 460 Zin f = 400 MHz 460 480 500 520 Zin () 2.0 - j6.1 1.8 - j5.3 1.6 - j4.7 1.5 - j4.2 1.4 - j3.8 1.3 - j3.6 1.2 - j3.5 ZOL* () 1.3 - j0.4 1.4 - j0.4 1.5 - j0.4 1.5 - j0.3 1.5 - j0.2 1.4 - j0.1 1.3 + j0.1
f = 400 MHz
= Conjugate of source impedance with parallel 160 resistor and 36 pF capacitor in series with gate.
ZOL* = Conjugate of the load impedance at given output power, voltage and frequency that produces maximum gain.
Figure 9. Series Equivalent Input and Output Impedance
MRF5015 4
MOTOROLA RF DEVICE DATA
Table 1. Common Source Scattering Parameters (VDS = 12.5 V) ID = 50 mA
f MHz 50 100 200 300 400 500 700 850 1000 |S11| 0.63 0.62 0.70 0.78 0.84 0.88 0.93 0.95 0.96 S11 -123 -142 -152 -157 -162 -165 -171 -175 -178 |S21| 8 4 1.8 1.1 0.70 0.49 0.28 0.20 0.15 S21 100 82 61 47 36 28 17 13 10 |S12| 0.063 0.063 0.056 0.046 0.037 0.029 0.016 0.010 0.007 S12 11 -6 - 23 - 35 - 42 - 46 - 45 - 31 11 |S22| 0.79 0.82 0.86 0.90 0.93 0.94 0.97 0.97 0.98 S22 -149 -162 -169 -171 -174 -175 -179 179 178
ID = 100 mA
f MHz 50 100 200 300 400 500 700 850 1000 |S11| 0.67 0.66 0.71 0.77 0.82 0.86 0.91 0.93 0.95 S11 -136 -153 -160 -163 -165 -168 -173 -176 -179 |S21| 9.1 4.6 2.2 1.3 0.89 0.64 0.37 0.27 0.20 S21 99 84 66 54 44 36 25 20 16 |S12| 0.047 0.048 0.043 0.037 0.031 0.025 0.015 0.010 0.009 S12 10 -3 -17 - 26 - 32 - 35 - 30 -11 25 |S22| 0.82 0.85 0.87 0.90 0.92 0.94 0.96 0.97 0.98 S22 -158 -168 -172 -174 -175 -177 -179 179 177
ID = 500 mA
f MHz 50 100 200 300 400 500 700 850 1000 |S11| 0.81 0.81 0.82 0.84 0.86 0.88 0.91 0.93 0.94 S11 -150 -164 -170 -173 -174 -175 -178 180 178 |S21| 11.1 5.6 2.7 1.7 1.2 0.92 0.57 0.43 0.33 S21 98 86 73 63 55 47 35 29 23 |S12| 0.027 0.027 0.025 0.023 0.020 0.018 0.013 0.013 0.014 S12 11 2 -5 -9 -9 -7 7 26 44 |S22| 0.85 0.87 0.88 0.89 0.91 0.92 0.94 0.95 0.96 S22 -168 -174 -176 -177 -178 -179 180 178 177
ID = 2.5 A
f MHz 50 100 200 300 400 500 700 850 1000 |S11| 0.86 0.85 0.86 0.87 0.89 0.91 0.93 0.94 0.95 S11 -144 -161 -170 -173 -175 -176 -179 179 177 |S21| 10.1 5.2 2.5 1.6 1.1 0.84 0.52 0.39 0.30 S21 101 88 74 64 55 48 37 30 26 |S12| 0.022 0.022 0.021 0.019 0.017 0.015 0.013 0.014 0.016 S12 15 5 -1 -4 -2 2 22 39 52 |S22| 0.85 0.87 0.89 0.90 0.91 0.93 0.95 0.96 0.96 S22 -171 -175 -177 -178 -178 -179 179 178 176
MOTOROLA RF DEVICE DATA
MRF5015 5
DESIGN CONSIDERATIONS
The MRF5015 is a common-source, RF power, N-Channel enhancement mode, Metal-Oxide Semiconductor Field- Effect Transistor (MOSFET). Motorola RF MOSFETs feature a vertical structure with a planar design. Motorola Application Note AN211A, "FETs in Theory and Practice," is suggested reading for those not familiar with the construction and characteristics of FETs. This device was designed primarily for 12.5 volt VHF and UHF power amplifier applications. The major advantages of RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high, on the order of 109 , resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, V GS(th). Gate Voltage Rating - Never exceed the gate voltage rating. Exceeding the rated V GS can result in permanent damage to the oxide layer in the gate region. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating must be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection - These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended with appropriate RF decoupling networks. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (C gs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (C ds). These capacitances are characterized as input (C iss), output (C oss) and reverse transfer (C rss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The C iss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and 2. zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications.
DC BIAS
Since the MRF5015 is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. See Figure 5 for a typical plot of drain current versus gate voltage. RF power FETs operate optimally with a quiescent drain current (I DQ), whose value is application dependent. The MRF5015 was characterized at I DQ = 100 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, I DQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws essentially no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system.
Drain Cgd Gate Cds Cgs Source Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd
DRAIN CHARACTERISTICS
One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, R ds(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The drain-source voltage under these conditions is termed V ds(on). For MOSFETs, V ds(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device.
GAIN CONTROL
Power output of the MRF5015 may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. Figure 4 is an example of output power variation with gate-source bias voltage with Pin held constant. This characteristic is very dependent on frequency and load line.
MRF5015 6
MOTOROLA RF DEVICE DATA
AMPLIFIER DESIGN
Impedance matching networks similar to those used with bipolar transistors are suitable for the MRF5015. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Both small-signal S-parameters and large-signal impedances are provided. While the S-parameters will not produce an exact design solution for high power operation, they do yield a good first approximation. This is an additional advantage of RF power MOSFETs. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of MRF5015
yield a device quite capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. Different stabilizing techniques may be required depending on the desired gain and bandwidth of the application. The RF test fixture implements a parallel resistor and capacitor in series with the gate to improve stability and input impedance Q. Two port stability analysis with the MRF5015 S-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters," for a discussion of two port network theory and stability.
MOTOROLA RF DEVICE DATA
MRF5015 7
PACKAGE DIMENSIONS
IDENTIFICATION NOTCH 6
-AL
5 4
Q 2 PL 0.15 (0.006)
M
TA
M
N
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
-N1 2 3
K
F D 2 PL 0.38 (0.015) M B J H C E -TSEATING PLANE
TA
M
M
N
M
M
0.38 (0.015)
TA
N
M
DIM A B C D E F H J K L N Q
INCHES MIN MAX 0.965 0.985 0.355 0.375 0.230 0.260 0.115 0.125 0.102 0.114 0.075 0.085 0.160 0.170 0.004 0.006 0.090 0.110 0.725 BSC 0.225 0.241 0.125 0.135
MILLIMETER MIN MAX 24.52 25.01 9.02 9.52 5.85 6.60 2.93 3.17 2.59 2.90 1.91 2.15 4.07 4.31 0.11 0.15 2.29 2.79 18.42 BSC 5.72 6.12 3.18 3.42
STYLE 3: PIN 1. 2. 3. 4. 5. 6.
SOURCE (COMMON) GATE (INPUT) SOURCE (COMMON) SOURCE (COMMON) DRAIN (OUTPUT) SOURCE (COMMON)
CASE 319-07 ISSUE M
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MRF5015 8
*MRF5015/D*
MRF5015/D MOTOROLA RF DEVICE DATA

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